A2TBH45M65W3-FC
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power - Max | - |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tj) |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 400V |
| Configuration | 5 N-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 30A, 18V |