BUK9E4R9-60E,127

BUK9E4R9-60E,127 is a NXP USA Inc. electronic component in Single FETs, MOSFETs. Specifications: MOSFET N-CH 60V 100A I2PAK. Purchasing and R&D teams can check this part number and

Which parts are supplied in stock?

TENYU ELECTRONICS(HK) CO.,LIMITED supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.

How do I request a quote by part number?

Open the part page and check the brand, package and electrical specifications against your requirement, then send an inquiry with the part number, quantity and target lead time. For several lines, use BOM matching and list every part once.

Do you support BOM matching?

Yes. Send the part numbers, quantities and brands. We check integrated circuits, resistors, capacitors and inductors against current stock, then reply with the quantity that can be delivered and the lines that need to be ordered.

Part Number:
BUK9E4R9-60E,127
Manufacturer:
NXP USA Inc.
Other Part Numbers:
-
Description:
MOSFET N-CH 60V 100A I2PAK
Datasheet:
PDF

Product Attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 25A, 10V
Power Dissipation (Max) 234W (Tc)
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9710 pF @ 25 V