PHD18NQ10T,118
PHD18NQ10T,118 is a NXP USA Inc. electronic component in Single FETs, MOSFETs. Specifications: MOSFET N-CH 100V 18A DPAK. Purchasing and R&D teams can check this part number and re
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Product Attributes
| Part Status | Obsolete |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| Power Dissipation (Max) | 79W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |