PSMN2R6-60PSQ
PSMN2R6-60PSQ is a NXP USA Inc. electronic component in Single FETs, MOSFETs. Specifications: NOW NEXPERIA PSMN2R6-60PSQ - 150. Purchasing and R&D teams can check this part number
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TENYU ELECTRONICS(HK) CO.,LIMITED supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7629 pF @ 25 V |
| Power Dissipation (Max) | 326W (Tc) |