PSMN8R5-100ESQ
PSMN8R5-100ESQ is a NXP USA Inc. electronic component in Single FETs, MOSFETs. Specifications: POWER FIELD-EFFECT TRANSISTOR, 1. Purchasing and R&D teams can check this part number
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Product Attributes
| Part Status | Obsolete |
|---|---|
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Power Dissipation (Max) | 263W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |